13 single ended s08p 30.0 1.6 60.0 2.50 c/w 65 1.6 10.00 2.0 55 0.65 8.00 4.5 60 0.20 70 parameter symbol min typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source voltage -65 c to 150 c c a v load mismatch tolerance vswr drain to gate voltage relative 0.40 0.20 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.40 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacitance idq = idq = 0.40 500 vgs = rdson saturation resistance forward transconductance gm vds = 10v, vgs = 5v polyfet rf devices 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:contact@polyfet.com url:www.polyfet. com 500 500 common source input capacitance 70 v igss vgs idsat zero bias drain current gate leakage current gate bias for drain current saturation current 25 ua v mho ohm amp parameter symbol min typ max units test conditions electrical characteristics ( each side ) rf characteristics ( 30.0 absolute maximum ratings ( t = gps 28.0 a, vds = v, f = a, vds = v, f = 28.0 28.0 watts v 1 mhz mhz mhz watts package style 30.0 vds = 0v vgs = 10v high efficiency, linear high gain, low noise general description 28.0 vds = a, vgs = vds ids = a ? db % o o o o o silicon gate enhancement mode rf power transistor ldmos vgs = 0v, f = 1 mhz 28.0 vds = vgs = 0v, f = 1 mhz 28.0 vds = vgs = 0v, f = 1 mhz 28.0 revision 02/25/2016 20 25 c ) watts output ) 150 polyfet rf devices L8701PR 10:1 rohs compliant silicon ldmos transistor designed specifically for broadband rf applications. suitable for military radios, cellular base staions, broadcast fm/am, mri, laser drivers and others. "polyfet" process features low feedback and output capacitances, resulting in high ft transistors with high input impedance and high efficiency. + v, ids = 20 v, vds = 10v vgs = 20 0 - v
l1b 1 die id & gm vs vg 0.10 1.00 10.00 100.00 0 2 4 6 8 1012141618 vgs in volts id in amps; gm in mhos id gm l1b 1 die capacitance 1 10 100 1000 0 4 8 1216202428 vds in volts coss ciss crss l8701p pin vs pout freq=500mhz, vds=28vdc, idq=.4a 0 9 18 27 36 45 0 0.5 1 1.5 2 2.5 3 p in in w a tts 11 12 13 14 15 16 17 18 19 20 pout gain efficiency @30 watts = 55% polyfet rf devices pout vs pin graph capacitance vs voltage id & gm vs vgs iv curve package dimensions in inches L8701PR l1b 1 die iv 0 2 4 6 8 10 12 048121620 vds in volts id in amps vg=2v vg=4v vg=6v vg=8v 0 vg=12v 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:contact@polyfet.com url:www.polyfet. com revision 02/25/2016 tolerance .xx +/-0.01 .xxx +/-.005 inches
l1b 1 die id & gm vs vg 0.10 1.00 10.00 100.00 0 2 4 6 8 1012141618 vgs in volts id in amps; gm in mhos id gm l1b 1 die capacitance 1 10 100 1000 0 4 8 1216202428 vds in volts coss ciss crss l8701p pin vs pout freq=500mhz, vds=28vdc, idq=.4a 0 9 18 27 36 45 0 0.5 1 1.5 2 2.5 3 p in in w a tts 11 12 13 14 15 16 17 18 19 20 pout gain efficiency @30 watts = 55% polyfet rf devices pout vs pin graph capacitance vs voltage id & gm vs vgs iv curve package dimensions in inches l8701p l1b 1 die iv 0 2 4 6 8 10 12 048121620 vds in volts id in amps vg=2v vg=4v vg=6v vg=8v 0 vg=12v 1110 avenida acaso, camarillo, ca 93012 tel:(805) 484-4210 fax: (805) 484-3393 email:contact@polyfet.com url:www.polyfet. com revision 02/25/2016 tolerance .xx +/-0.01 .xxx +/-.005 inches
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